| IMAGE | PART NO | PRICE | QTY | STOCK | MANUFACTURER | PACKAGE | PACKAGING | PRODUCT CATEGORY | Brand | BV DSS (V) | Carrier Life | CISS(Max.) | Configuration | CRSS(Max.) | Driver Supply Voltage | ESD | Factory Pack Quantity | Height | Id(on)(A) | Id(on)(Max.) | ID-Cont | IDSS(Max.) | IDSS(Min.) | If - Forward Current | Ir - Reverse Current | Length | Manufacturer | Maximum Diode Capacitance | Maximum Operating Frequency | Maximum Operating Temperature | Maximum Series Resistance @ Maximum IF | Maximum Series Resistance @ Minimum IF | Minimum Operating Frequency | Minimum Operating Temperature | Mounting Style | Overcurrent Protection | Overtemp. Protection | Overvoltage Protection | Package / Case | Package/Temperature | Packaging | Part # Aliases | Pd - Power Dissipation | PD(Max.) | Polarity | Product Category | Product Type | Rds On - Drain-Source Resistance | RDS(on)(Max.) | RDS(on)(Max.)(Ω) | rDS(on)(mΩ) | Recovery Time | RoHS | Series | Subcategory | Termination Style | TFALL | Type | Unit Weight | VBR | VCE(sat)1 | VCE(sat)2 | VCES | Vf - Forward Voltage | VGSS(Min.) | Vr - Reverse Voltage | Width |
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NDF10N62ZG
N-Channel Power MOSFET 620 V, 0.65 Ω
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1+ $0.63012 25+ $0.56135 50+ $0.53890 100+ $0.51223 250+ $0.49399 500+ $0.47154 1000+ $0.44627 |
BUY
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15
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ON Semiconductor | - | - | - | 10 A | ON Semiconductor | TO-220-3/-55~150 ℃ | N-Channel | 750 mΩ | 620 V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
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NTD6415ANT4G
N-Channel Power MOSFET 100 V, 23 A, 55 mΩ
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147635
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ON Semiconductor | - | - | - | 23 A | ON Semiconductor | DPAK-3/-55~150 ℃ | N-Channel | 55 mΩ | 100 V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IPD036N04LG
40V,90A,N Channel Power MOSFET
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703553
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Infineon Technologies | - | - | - | 90 A | Infineon Technologies | DPAK-3/-55~175 ℃ | N-Channel | 3.6 mΩ | 40 V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSZ035N03MSG
30V,40A,N Channel Power MOSFET
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139031
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Infineon Technologies | - | - | - | 40 A | Infineon Technologies | TSDSON-8/-55~150 ℃ | N-Channel | 3.5 mΩ | 30 V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSC340N08NS3G
80V,23A,N-channel power MOSFET
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482377
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Infineon Technologies | - | - | - | 23 A | Infineon Technologies | TDSON-8/-55~150 ℃ | N-Channel | 34 mΩ | 80 V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSP171PH6327
-60V,-1.9A P-Channel Power MOSFET
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173045
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Infineon Technologies | - | - | - | -1.9 A | Infineon Technologies | SOT223-4/-55~150 ℃ | P-Channel | 300 mΩ | -60 V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSZ100N06LS3G
60V,17.9mΩ,20A,N-Channel Power MOSFET
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293609
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Infineon Technologies | - | - | - | 20 A | Infineon Technologies | PG-TSDSON-8/-55~150 ℃ | N-Channel | 17.9 mΩ | 60 V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSC160N10NS3G
100V,16mΩ,42A,N-Channel Power MOSFET
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1+ $0.46141 10+ $0.42420 30+ $0.41676 |
BUY
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139
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Infineon Technologies | - | - | - | 42 A | Infineon Technologies | PG-TDSON-8/-55~150 ℃ | N-Channel | 16 mΩ | 100 V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS123NH6327
100V,0.19A,N channel Power MOSFET
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806418
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Infineon Technologies | - | - | - | 0.19 A | Infineon Technologies | SOT-23-3/-55~150 ℃ | N-Channel | 6000 mΩ | 100 V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IPD031N06L3G
60V,100A,N Channel Power MOSFET
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739129
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Infineon Technologies | - | - | - | 100 A | Infineon Technologies | DPAK-3/-55~175 ℃ | N-Channel | 3.1 mΩ | 60 V |
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